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  1 mbr30l45ctg, MBRF30L45CTG switchmode ? power rectifier 45 v, 30 a features and benefits ? low forward voltage ? low power loss/high efficiency ? high surge capacity ? 150 c operating junction temperature ? 30 a total (15 a per diode leg) ? guard ? ring for stress protection applications ? power supply ? output rectification ? power management ? instrumentation mechanical characteristics: ? case: epoxy, molded ? epoxy meets ul 94 v ? 0 @ 0.125 in ? weight (approximately): 1.9 grams ? finish: all external surfaces corrosion resistant and terminal leads are readily solderable ? lead temperature for soldering purposes: 260 c max. for 10 seconds ? shipped 50 units per plastic tube ? this is a pb ? free device* maximum ratings dual schottky barrier rectifiers 30 amperes, 45 volts 1 3 2, 4 www.kersemi.com device package shipping ordering information marking diagrams b30l45 = device code a = assembly location y = year ww = work week aka = polarity designator g = pb ? free device MBRF30L45CTG to ? 220fp (pb ? free) 50 units/rail to ? 220 case 221a plastic 3 1 2 4 ayww b30l45g a k a to ? 220 case 221d style 3 b30l45g yww mbr30l45ctg to ? 220 (pb ? free) 50 units/rail
mbr30l45ctg, MBRF30L45CTG www.kersemi.com 2 maximum ratings (per diode leg) rating symbol value unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 45 v average rectified forward current (rated v r ) t c = 137 c i f(av) 15 a peak repetitive forward current (rated v r , square wave, 20 khz) i frm 30 a nonrepetitive peak surge current (surge applied at rated load conditions halfwave, single phase, 60 hz) i fsm 190 a operating junction temperature (note 1) t j ? 55 to +150 c storage temperature t stg  55 to +175 c voltage rate of change (rated v r ) dv/dt 10,000 v/  s esd ratings: machine model = c human body model = 3b > 400 > 8000 v thermal characteristics maximum thermal resistance (mbr30l45ctg) junction ? to ? case junction ? to ? ambient (MBRF30L45CTG) junction ? to ? case r  jc r  ja r  jc 1.9 45 2.2 c/w electrical characteristics (per diode leg) maximum instantaneous forward voltage (note 2) (i f = 15 a, t c = 25 c) (i f = 15 a, t c = 125 c) (i f = 30 a, t c = 25 c) (i f = 30 a, t c = 125 c) v f 0.50 0.44 0.61 0.60 v maximum instantaneous reverse current (note 2) (rated dc voltage, t c = 25 c) (rated dc voltage, t c = 125 c) i r 0.65 250 ma
mbr30l45ctg, MBRF30L45CTG www.kersemi.com 3 typical characteristics figure 1. typical forward voltage figure 2. maximum forward voltage v f , instantaneous forward voltage (v) 0.9 0.7 0.6 0.5 0.3 0.2 0.1 0 0.1 1 10 figure 3. typical reverse current figure 4. maximum reverse current v r , reverse voltage (v) 50 35 30 25 15 10 5 0 1e ? 04 1e ? 03 1e ? 02 1e ? 01 1e+00 figure 5. current derating t c , case temperature ( c) 155 145 140 125 120 110 105 100 0 5 15 20 i f , instantaneous forward current (a) i r , reverse current (a) i f , average forward current (a) 0.4 100 150 c 125 c 25 c 150 c 125 c 25 c 20 40 45 130 115 135 10 square wave dc 0.8 75 c v f , maximum forward voltage (v) 0.9 0.7 0.6 0.5 0.3 0.2 0.1 0 0.1 1 10 i f , instantaneous forward current (a) 0.4 100 150 c 125 c 25 c 0.8 75 c 1e ? 05 75 c v r , reverse voltage (v) 50 35 30 25 15 10 5 0 1e ? 04 1e ? 03 1e ? 02 1e ? 01 1e+00 i r , reverse current (a) 150 c 125 c 25 c 20 40 45 1e ? 05 75 c 150 25 30
mbr30l45ctg, MBRF30L45CTG www.kersemi.com 4 typical characteristics figure 6. forward power dissipation figure 7. typical capacitance v r , reverse voltage (v) 40 35 25 20 15 10 5 0 100 1000 10000 c, capacitance (pf) 45 30 i o , average forward current (a) 30 25 15 10 5 0 0 4 8 p fo , average power dissipation (w) 20 24 square wave 12 16 20 28 dc 2 6 22 10 14 18 26 r(t), transient thermal resistance figure 8. thermal response junction ? to ? ambient for mbr30l45ctg 1000 0.1 0.00001 t 1 , time (sec) 1 0.0001 0.001 0.01 1 10 100 0.000001 0.1 10 100 p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d = 0.5 single pulse 0.2 0.1 0.05 0.01 r(t), transient thermal resistance figure 9. thermal response junction ? to ? case for mbr30l45ctg 1000 0.1 0.00001 t 1 , time (sec) 10 0.01 0.0001 0.001 0.01 1 10 100 0.000001 0.1 1 p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d = 0.5 single pulse 0.2 0.1 0.05 0.01 0.01
mbr30l45ctg, MBRF30L45CTG www.kersemi.com 5 r(t), transient thermal resistance figure 10. thermal response junction ? to ? case for MBRF30L45CTG 1000 0.1 0.00001 t 1 , time (sec) 0.1 0.0001 0.001 0.01 1 10 100 0.000001 0.01 1 10 p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d = 0.5 single pulse 0.2 0.1 0.05 0.01 0.001
mbr30l45ctg, MBRF30L45CTG http://onsemi.com 6 package dimensions to ? 220 case 221a ? 09 issue af notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.161 3.61 4.09 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.014 0.025 0.36 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 b q h z l v g n a k f 123 4 d seating plane ? t ? c s t u r j to ? 220 fullpak case 221d ? 03 issue k style 3: pin 1. anode 2. cathode 3. anode dim a min max min max millimeters 0.617 0.635 15.67 16.12 inches b 0.392 0.419 9.96 10.63 c 0.177 0.193 4.50 4.90 d 0.024 0.039 0.60 1.00 f 0.116 0.129 2.95 3.28 g 0.100 bsc 2.54 bsc h 0.118 0.135 3.00 3.43 j 0.018 0.025 0.45 0.63 k 0.503 0.541 12.78 13.73 l 0.048 0.058 1.23 1.47 n 0.200 bsc 5.08 bsc q 0.122 0.138 3.10 3.50 r 0.099 0.117 2.51 2.96 s 0.092 0.113 2.34 2.87 u 0.239 0.271 6.06 6.88 seating plane ? t ? u c s j r notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch 3. 221d-01 thru 221d-02 obsolete, new standard 221d-03. ? b ? ? y ? g n d l k h a f q 3 pl 123 m b m 0.25 (0.010) y www.kersemi.com 6


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